Si7636DP
Vishay Siliconix
MOSFET SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
1.0
3.0
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 20 V
V DS = 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, T J = 55 °C
V DS ≥ 5 V, V GS = 10 V
30
± 100
1
5
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
Diode Forward Voltage a
R DS(on)
g fs
V SD
V GS = 10 V, I D = 25 A
V GS = 4.5 V, I D = 19 A
V DS = 15 V, I D = 25 A
I S = 2.9 A, V GS = 0 V
0.0033
0.004
110
0.72
0.004
0.0048
1.1
Ω
S
V
Dynamic b
Input Capacitance
C iss
5600
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
C oss
C rss
Q g
Q gs
Q gd
V DS = 15 V, V DS = 0 V, f = 1 MHz
V DS = 15 V, V GS = 4.5 V, I D = 20 A
860
415
36
18
10
50
pF
nC
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
R g
t d(on)
t r
t d(off)
t f
t rr
V DD = 15 V, R L = 15 Ω
I D ? 1 A, V GEN = 10 V, R g = 6 Ω
I F = 2.9 A, dI/dt = 100 A/μs
0.6
1.3
24
16
90
32
45
2.0
35
25
140
50
70
Ω
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
50
40
30
20
V GS = 10 thru 4 V
60
50
40
30
20
T C = 125 °C
10
3V
10
25 °C
- 55 °C
0
0
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
www.vishay.com
2
V DS - Drain-to-Source Voltage (V)
Output Characteristics
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 72768
S09-0272-Rev. G, 16-Feb-09
相关PDF资料
SI7655DN-T1-GE3 MOSFET P-CH 20V D-S PPAK 1212
SI7658ADP-T1-GE3 MOSFET N-CH 30V 60A PPAK 8SOIC
SI7682DP-T1-GE3 MOSFET N-CH D-S 30V PPAK 8SOIC
SI7726DN-T1-GE3 MOSFET N-CH 30V 35A 1212-8
SI7738DP-T1-E3 MOSFET N-CH D-S 150V PPAK 8SOIC
SI7758DP-T1-GE3 MOSFET N-CH 30V 60A PPAK 8SOIC
SI7802DN-T1-GE3 MOSFET N-CH 250V 1.24A 1212-8
SI7810DN-T1-GE3 MOSFET N-CH D-S 100V 1212-8 PPAK
相关代理商/技术参数
SI7652DP-T1-E3 功能描述:MOSFET 30V 15A 3.9W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7652DP-T1-GE3 功能描述:MOSFET 30V 15A 3.9W 15.8mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7655ADN-T1-GE3 制造商:Vishay Siliconix 功能描述:MOSFET P-CHAN 20V D-S 1212-8S
SI7655DN 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20 V (D-S) MOSFET
SI7655DN-T1-GE3 功能描述:MOSFET -20V 3.6mOhm@10V 40A P-Ch G-III RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7658ADP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SI7658ADP-T1-GE3 功能描述:MOSFET 30V 60A 83W 2.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7658DP-T1-E3 功能描述:MOSFET 30V 60A 104W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube